• DocumentCode
    3067427
  • Title

    Hysteresis in floating-body PD/SOI CMOS circuits

  • Author

    Pelella, M.M. ; Chuang, C.T. ; Tretz, C. ; Curran, B.W. ; Rosenfield, M.G.

  • Author_Institution
    LOA, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    278
  • Lastpage
    281
  • Abstract
    In this paper the hysteretic (history-dependent) propagation gate delay of floating-body (FB) partially depleted (PD) SOI CMOS circuits is investigated. The change in gate propagation delay with time is examined with no preconditioning of the floating-body. The simulation-based analysis includes the sensitivity of the hysteresis to supply voltage, Wp/Wn (beta ratio), duty cycle, slew rate, output load, and initial state of the circuit. Basic physical mechanisms underlying the hysteretic circuit behavior are examined. The results identify the main contributors and general trends of hysteresis in FB PD/SOI circuits. The insight gained can ultimately be incorporated into conventional circuit timing tools. The results also reveal a circuit sizing methodology to minimize the hysteresis effects in circuits using PD/SOI technology
  • Keywords
    CMOS logic circuits; SPICE; circuit simulation; delays; hysteresis; integrated circuit modelling; silicon-on-insulator; timing; PD/SOI technology; SPICE model; beta ratio; circuit sizing methodology; circuit timing tools; duty cycle; floating-body partially depleted SOI CMOS circuits; history-dependent propagation gate delay; hysteresis effects minimization; hysteretic circuit behavior; hysteretic propagation gate delay; initial state; output load; physical mechanisms; simulation-based analysis; slew rate; static CMOS inverter; supply voltage; CMOS logic circuits; CMOS technology; Circuit simulation; Hysteresis; MOS devices; Predictive models; Propagation delay; Pulse width modulation inverters; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1999. International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-5620-9
  • Type

    conf

  • DOI
    10.1109/VTSA.1999.786054
  • Filename
    786054