A high reliability metallization system for a double metal 1.5 mu m CMOS process

Author

Nulty, Jim ; Spadini, G. ; Pramanik, D.

Author_Institution

VLSI Technol. Inc., San Jose, CA, USA

fYear

1988

fDate

13-14 June 1988

Firstpage

453

Lastpage

459

Abstract

A high-reliability double-metal process is described that overcomes many of the reliability problems encountered with Al alloy films. The metallization utilizes a multilayer metal consisting of Al-1% Cu sandwiched between two TiW films. The contact resistance to both N/sup +/ and P/sup +/ are the lowest possible to both diffusions for any metallizations. As a result, contact resistance is not the limiting factor to device performance for either P-channel or N-channel devices. The current-carrying capability of both levels of metals is at least a factor of three higher than Al-Si alloys over flat areas and an order higher from via chains. The metallization is robust enough to sustain thermal and mechanical stresses without failure.<>

Keywords

CMOS integrated circuits; aluminium alloys; contact resistance; copper alloys; integrated circuit technology; metallisation; reliability; titanium alloys; tungsten alloys; 1.5 micron; CMOS process; N-channel devices; P-channel devices; TiW-AlCu-TiW; contact resistance; current-carrying capability; double-metal process; high reliability metallization system; CMOS process; Chemistry; Circuits; Electromigration; Implants; Metallization; Nonhomogeneous media; Sputter etching; Surfaces; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE

Conference_Location

Santa Clara, CA, USA

Type

conf

DOI

10.1109/VMIC.1988.14225

Filename

14225