DocumentCode :
3067499
Title :
Whole-chip ESD protection strategy for CMOS IC´s with multiple mixed-voltage power pins
Author :
Ker, Ming-Dou ; Chang, Hun-Hsien
Author_Institution :
VLSI Design Dev., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
1999
fDate :
1999
Firstpage :
298
Lastpage :
301
Abstract :
A novel whole-chip ESD (electrostatic discharge) protection design with multiple ESD buses has been proposed to solve the ESD protection issue in CMOS ICs with multiple mixed-voltage power pins. The ESD current in the CMOS IC is diverted into the ESD buses, therefore the ESD current is conducted by the ESD buses away from the internal circuits and quickly discharged through the desired ESD protection devices. By using the ESD buses, the CMOS IC with separated power pins can be safely protected against ESD damage which is often located in the internal circuits
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit design; protection; 0.25 mum; 0.35 mum; CMOS IC; internal circuits; multiple ESD buses; multiple mixed-voltage power pins; total voltage drop; whole-chip ESD protection strategy; Bidirectional control; CMOS integrated circuits; Communication industry; Computer aided manufacturing; Electrostatic discharge; Integrated circuit noise; Pins; Protection; Semiconductor diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-5620-9
Type :
conf
DOI :
10.1109/VTSA.1999.786059
Filename :
786059
Link To Document :
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