Title :
GaAs MOSFETs using Ga2O3(Gd2O3) as gate dielectric
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Growth of an oxide mixture, Ga2O3(Gd2 O3), in ultra-high vacuum, on clean and ordered GaAs(100) surface has produced atomically smooth oxide/GaAs interfaces with a low interfacial density of states. Both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates with inversion were demonstrated using this novel oxide as the gate dielectric and a conventional ion-implant technology. Depletion-mode GaAs MOSFETs with accumulation were also fabricated. The Ga2O3(Gd 2O3) films with thickness varying from 500 to 50 Å show a low leakage current density of 10-9 A/cm2 at low gate bias up to 2.5 V, and electrical breakdown fields of >10 MV/cm
Keywords :
III-V semiconductors; MOSFET; current density; electric breakdown; electronic density of states; gadolinium compounds; gallium arsenide; gallium compounds; interface states; leakage currents; semiconductor epitaxial layers; GaAs; GaAs(100) surface; GaAs-Ga2O3; GaAs-Gd2O3; MOSFET; atomically smooth interfaces; depletion-mode transistors; electrical breakdown fields; enhancement-mode transistors; interfacial density of states; ion-implant technology; leakage current density; oxide gate dielectric; semi-insulating substrates; Dielectrics; Electrons; Gallium arsenide; Leakage current; MOSFET circuits; Molecular beam epitaxial growth; Optical films; Oxidation; Surface cleaning; Surface contamination;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786061
