Title :
CMOS Nanostructures with Improved Temperature Behavior Using Double Differential Structures
Author :
Popa, Cosmin Radu
Author_Institution :
Fac. of Electron., Telecommun. & Inf. Technol., Univ. Politeh. of Bucharest, Bucharest, Romania
Abstract :
An original superior-order curvature-corrected integrated nanostructure will be presented. In order to improve the temperature behavior of the circuit, a double differential structure will be used, implementing linear and superior-order curvature corrections. The superior-order curvature-correction is achieved by taking the difference between two gate-source voltages of subthreshold-operated MOS transistors, biased at drain currents having different temperature dependencies: PTAT (Proportional To Absolute Temperature) and PTAT2. The SPICE simulations confirm the theoretical estimated results, showing a temperature coefficient under 11 ppm/K for an extended input range 223 K < T < 423 K and for a supply voltage of 1.8 V and a current consumption of about 1 muA results.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; nanoelectronics; CMOS nanostructures; PTAT; PTAT2; SPICE simulations; double differential structures; drain currents; gate-source voltages; linear-order curvature corrections; subthreshold-operated MOS transistors; superior-order curvature-corrected integrated nanostructure; temperature coefficient; voltage 1.8 V; CMOS technology; Integrated circuit technology; MOSFETs; Nanoscale devices; Nanostructures; Temperature dependence; Temperature distribution; Temperature sensors; Very large scale integration; Voltage; integrated nanostructures; superior-order curvature-correction technique; temperature behavior;
Conference_Titel :
Sensor Technologies and Applications, 2009. SENSORCOMM '09. Third International Conference on
Conference_Location :
Athens, Glyfada
Print_ISBN :
978-0-7695-3669-9
DOI :
10.1109/SENSORCOMM.2009.21
