Improved Bridgman technique for the growth of AgGaSe2 single crystals

AgGaSe₂ crystal growth has been realized by an improved Bridgman technique with only a one-zone vertical growth furnace. The technique is to make the solid-liquid interface move from the bottom to the top of the AgGaSe₂ melting polycrystalline materials to grow AgGaSe₂ single crystals by controlling the growth temperature. Boules with size of Φ12×50 mm and Φ10×20 mm were grown out of the polycrystalline material with different growth rates of 0.2 mm/h and 0.8 mm/h respectively. Analysis of their X-ray diffraction and SEM micrographs shows that the boules were AgGaSe₂ single crystals