Title :
Growth of wurtzite GaN films on α-Al2O3 substrates using light radiation heating metal-organic chemical vapor deposition
Author :
Zhou, Y.G. ; Shen, B. ; Chen, Z.Z. ; Chen, P. ; Zhang, R. ; Shi, Y. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
Epitaxial growth of high quality hexagonal GaN films on sapphire substrates using light radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is reported. The deposition temperature is 950°C, about 100°C lower than that in normal rf-heating MOCVD growth. The FWHM of the GaN (0002) peak of X-ray diffraction rocking curve is 9.8 arc min. The photoluminescence spectrum of GaN shows that there is a very strong band-edge emission and no “yellow-band” luminescence. Hall measurement indicates that the n-type background carrier concentration of the GaN film is 1.7×1018 cm-3 and the Hall mobility is 121.5 cm2/V.s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages of the parasitic reaction between trimethylgallium and ammonia
Keywords :
Hall mobility; III-V semiconductors; MOCVD; X-ray diffraction; carrier density; gallium compounds; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; α-Al2O3 substrates; 950 degC; Al2O3; GaN; Hall mobility; X-ray diffraction rocking curve; band-edge emission; epitaxial growth; high quality hexagonal films; light radiation heating MOCVD; n-type background carrier concentration; photoluminescence; wurtzite GaN films; Chemical vapor deposition; Epitaxial growth; Gallium nitride; Heating; Luminescence; MOCVD; Photoluminescence; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786065
