Title :
Characterization studies of deep levels in silicon doped copper diffused GaAs and their significance for bulk GaAs switches
Author :
Thomas, Lucy M. ; Panigrahi, Sridhar ; Lakdawala, Vishnu K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
Abstract :
Deep-level characterization studies have been carried out for silicon-doped copper-compensated gallium arsenide (GaAs:Si:Cu) which is used to fabricate bulk optically controlled semiconductor switches. A photoinduced current transient spectroscopy technique has been used to identify various deep levels present in GaAs:Si:Cu, and from the findings probable models for the copper-related complexes in GaAs are proposed. The effect of diffusion parameters on the formation of different copper deep levels has been studied. The influence of copper deep levels (CuA and CuB) on switch performance is discussed
Keywords :
III-V semiconductors; copper; deep levels; gallium arsenide; photoelectric devices; semiconductor switches; silicon; GaAs:Si, Cu; III-V semiconductors; bulk switches; deep levels; diffusion parameters; optically controlled semiconductor switches; photoinduced current transient spectroscopy; switch performance; Copper; Doping; Fabrication; Gallium arsenide; Optical computing; Optical control; Optical switches; Photonic band gap; Silicon; Spectroscopy;
Conference_Titel :
Southeastcon '92, Proceedings., IEEE
Conference_Location :
Birmingham, AL
Print_ISBN :
0-7803-0494-2
DOI :
10.1109/SECON.1992.202329
