Characterization studies of deep levels in silicon doped copper diffused GaAs and their significance for bulk GaAs switches

Author

Thomas, Lucy M. ; Panigrahi, Sridhar ; Lakdawala, Vishnu K.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

fYear

1992

fDate

12-15 Apr 1992

Firstpage

171

Abstract

Deep-level characterization studies have been carried out for silicon-doped copper-compensated gallium arsenide (GaAs:Si:Cu) which is used to fabricate bulk optically controlled semiconductor switches. A photoinduced current transient spectroscopy technique has been used to identify various deep levels present in GaAs:Si:Cu, and from the findings probable models for the copper-related complexes in GaAs are proposed. The effect of diffusion parameters on the formation of different copper deep levels has been studied. The influence of copper deep levels (Cu_A and Cu_B) on switch performance is discussed

Keywords

III-V semiconductors; copper; deep levels; gallium arsenide; photoelectric devices; semiconductor switches; silicon; GaAs:Si, Cu; III-V semiconductors; bulk switches; deep levels; diffusion parameters; optically controlled semiconductor switches; photoinduced current transient spectroscopy; switch performance; Copper; Doping; Fabrication; Gallium arsenide; Optical computing; Optical control; Optical switches; Photonic band gap; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '92, Proceedings., IEEE

Conference_Location

Birmingham, AL

Print_ISBN

0-7803-0494-2

Type

conf

DOI

10.1109/SECON.1992.202329

Filename

202329