Title :
BiCMOS gate delay analysis including temperature effect and high current transients
Author :
Yuan, J.S. ; Pham, H.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The model accounts for high electric field effect in the nMOS transistor and high current effects in the bipolar transistor for a wide temperature range. The analytical equations provide evaluation of the sensitivity of process and device parameters on circuit performance at different temperatures. Computer simulation results of a BiCMOS driver using the present analysis are compared with PISCES simulation in support of physical reasoning
Keywords :
BiCMOS integrated circuits; driver circuits; integrated logic circuits; semiconductor device models; semiconductor process modelling; transient response; BiCMOS gate delay analysis; PISCES simulation; bipolar transistor; circuit performance; device parameters; high current transients; high electric field effect; nMOS transistor; process parameters; sensitivity; temperature effect; BiCMOS integrated circuits; Bipolar transistors; Circuit optimization; Computer simulation; Delay effects; Differential equations; MOSFETs; Performance analysis; Temperature distribution; Temperature sensors;
Conference_Titel :
Southeastcon '92, Proceedings., IEEE
Conference_Location :
Birmingham, AL
Print_ISBN :
0-7803-0494-2
DOI :
10.1109/SECON.1992.202331
