Two-dimensional MOS device modeling at low-temperature

Author

Ghazavi, Parviz ; Ho, Fat Duen

Author_Institution

Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA

fYear

1992

fDate

12-15 Apr 1992

Firstpage

189

Abstract

Develops a two-dimensional numerical model for short-channel MOSFETs over a temperature range of 55-350 K. This model is equivalent to that of Selberherr. The simplification of Fermi-Dirac integrals for different temperature ranges is presented. Gummel´s conventional decoupled method is used for linearization of basic semiconductor equations. In conjunction with Gummel´s algorithm overrelaxation was used to speed up the convergence. A strongly implicit iterative method proposed by Stone was used to solve the nonlinear equations. The preliminary results for incorporating the simplified approximation for the Fermi-Dirac integrals into the MOS device modeling at low temperature are reported. These results include the ionized doping distributions, the threshold voltage, and the subthreshold characteristics of the device at low temperature, which are compared with those at room temperature

Keywords

doping profiles; insulated gate field effect transistors; relaxation theory; semiconductor device models; 55 to 350 K; Fermi-Dirac integrals; Gummel´s conventional decoupled method; ionized doping distributions; linearization; nonlinear equations; overrelaxation; semiconductor equations; subthreshold characteristics; threshold voltage; two-dimensional numerical model; Convergence; Integral equations; Iterative algorithms; Iterative methods; MOS devices; MOSFETs; Nonlinear equations; Numerical models; Semiconductor process modeling; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '92, Proceedings., IEEE

Conference_Location

Birmingham, AL

Print_ISBN

0-7803-0494-2

Type

conf

DOI

10.1109/SECON.1992.202333

Filename

202333