Title :
SOI material: ready to take over mainstream bulk Si
Author_Institution :
Sematech, Austin, TX, USA
Abstract :
An extensive effort has been undertaken to benchmark the quality of the 200 mm SOI substrates, involving all viable sources of the material in the world. A comprehensive overview of the state of the art of all pertinent parameters of this material is given. The quality of the recent material appears very competitive with the bulk material. In particular, the level of defects in the SOI film is comparable to bulk, below 0.1/cm2 for the best material. SOI wafer processing will require only minor equipment and process adjustments. The main challenges for the SOI material today is a sustainable consistency of its parameters, the price and volume availability
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit manufacture; semiconductor device manufacture; silicon-on-insulator; CMOS; MOSFETs; SOI substrates; defects; floating body effects; surface roughness; wafer processing; Bars; Circuits; Random access memory; Rough surfaces; Semiconductor films; Semiconductor materials; Substrates; Surface roughness; Thermal conductivity; Thermal resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786074
