DocumentCode :
3068002
Title :
Estimating RIE Damage by the FLECharacteristics of Bipolar Transistors
Author :
Nakanishi, Toshio ; Nagami, Akira ; Okumura, Nobuo
Author_Institution :
Sumitomo Metal Industries, Ltd.
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
37
Lastpage :
40
Keywords :
Bipolar transistors; Charge carrier processes; Energy states; Etching; Laboratories; Metals industry; P-n junctions; Radiative recombination; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715198
Filename :
715198
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3068002
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