Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application

Author

Yang, Bing ; Huang, Ru ; Zhang, Xing ; Wang, Yang Yuan

Author_Institution

Inst. of Microelectron., Beijing Univ., China

fYear

1998

fDate

1998

Firstpage

734

Lastpage

737

Abstract

For silicon-on-insulator (SOI) technology compared with the bulk circuit, an obvious improvement in power consumption and speed is always observed for the corresponding SOI circuit. Due to their electrical properties, SOI devices may be a solution for low-power application. But FD devices and PD devices have different properties. Detailed analysis and comparison between the different SOI devices operating at low voltage is needed. In this paper, Medici 4.0 is used to study FD and FD devices. Different device parameter influence on devices and circuits behaviour is described

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; FD devices; Medici 4.0; PD devices; SOI MOSFET; Si-SiO₂; channel design; device parameter; low voltage; low-voltage low-power application; power consumption; silicon-on-insulator; speed; CMOS technology; Capacitance; Doping; Energy consumption; Leakage current; Low voltage; MOSFET circuits; Microelectronics; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786092

Filename

786092