Title :
Delamination of thin Si layer in the H+ implanted Si for the manufacture of SOI Si wafer-fundamental phenomena and the properties of the delaminated Si layers
Author_Institution :
Electr. Eng., Hosei Univ., Koganei, Japan
Abstract :
This paper reviews the delamination of thin Si layer in H+ implanted Si layers. Layer properties of the device Si layer were measured by minority carrier lifetime technique
Keywords :
carrier lifetime; delamination; elemental semiconductors; hydrogen; ion implantation; minority carriers; proton effects; silicon; silicon compounds; silicon-on-insulator; H+ implanted Si; H+ implanted Si layers; SOI Si wafer; Si:H-SiO2; delaminated Si layers; delamination; minority carrier lifetime technique; review; thin Si layer; Annealing; Atomic layer deposition; Atomic measurements; Delamination; Ion implantation; Manufacturing processes; Pulp manufacturing; Silicon carbide; Silicon on insulator technology; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786121
