Title :
Study on the interfacial SiO2 layer of silicon wafer direct bonding
Author :
He, Jin ; Wang, Xin ; Bi-Chen, Xing
Author_Institution :
Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The interfacial SiO2 layer of silicon wafer direct bonding has been studied in this paper. By means of AES and SEM, it has been found that interfacial SiO2 disintegrates into sphere-shaped islands with average radius much larger than the thickness of the native oxide layer, and is of amorphous material, SiO2, experimentally. The theoretical analysis shows that SiO 2 spontaneously disintegrates into islands in order to decrease the interface free energy as much as possible
Keywords :
Auger electron spectra; amorphous state; elemental semiconductors; scanning electron microscopy; silicon; silicon compounds; wafer bonding; AES; SEM; Si-SiO2-Si; amorphous material; interface free energy; interfacial SiO2 layer; sphere-shaped islands; wafer direct bonding; Annealing; Bismuth; Boats; Cleaning; Conductivity; Silicon; Surface contamination; Temperature; Wafer bonding; Water pollution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786124
