The reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

Author

Xu, Chen ; Zhang, Jingyan ; Zhao, Lixin ; Deng, Jun ; Tao, Changbao ; Gao, Guo ; Du, Jinyu ; Luo, Ji ; Zou, Deshu ; Chen, Jianxin ; Shen, Guangdi

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1998

fDate

1998

Firstpage

776

Lastpage

779

Abstract

Ion implantation and the side-wall oxide self-aligned technique was used to reduce the extrinsic base resistance of a SiGe HBT. The sheet resistance of the SiGe layer was reduced over 20 times under proper implantation and annealing parameters, and ohmic contacting was also improved. This can greatly enhance the frequency performance and reduce the noise figure of SiGe HBT. The SiGe sheet resistance is sensitive to the implantation and annealing parameters. For our samples an implantation dose of 10¹⁶/cm³ and energy of 35 kev, annealing temperature from 960°C to 1000°C is suitable

Keywords

Ge-Si alloys; annealing; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor device noise; semiconductor doping; semiconductor materials; silicon; 960 to 1000 degC; HBT; SiGe-Si; annealing; base resistance; ion implantation; noise figure; ohmic contact; sheet resistance; side-wall oxide self-aligned technique; Annealing; Contact resistance; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Ion implantation; Noise figure; Noise reduction; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786135

Filename

786135