• DocumentCode
    3069024
  • Title

    The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high fT

  • Author

    Kong, Deyi ; Li, Yao ; Wei, Tongli ; Nie, Weidong ; Qian, Wensheng

  • Author_Institution
    Microelectron. Center, Southeast Univ., Nanjing, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    784
  • Lastpage
    787
  • Abstract
    In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; collector space-charge-region width; discontinuity; lowly doped collector; npn SiGe base HBTs; punch-through; Capacitance; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Silicon germanium; Substrates; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786138
  • Filename
    786138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3069024