DocumentCode :
3069044
Title :
Process-Induced Gate Oxide Damage Issues in Advanced Plasma Chemical Vapor Deposition Processes
Author :
Cote, D. ; Nguyen, S. ; McGahay, V. ; Waskiewicz, C. ; Chang, S. ; Stamper, A. ; Weigand, P. ; Shoda, N. ; Matsuda, T.
Author_Institution :
IBM Microelectronics
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
61
Lastpage :
66
Keywords :
Chemical vapor deposition; Etching; Fabrication; Microelectronics; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma sources; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715203
Filename :
715203
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3069044
