DocumentCode
3069320
Title
Low pressure growth of diamond films under fluorine addition
Author
Ji-Tao, WANG ; Yong-Zhong, WAN ; Zhi-Jie, LIU ; Wei, David ZHANG ; Zhang Jian-Yun
Author_Institution
CVD Lab., Fudan Univ., Shanghai, China
fYear
1998
fDate
1998
Firstpage
800
Lastpage
802
Abstract
Phase diagrams in the C-H-F system for low pressure diamond growth have been calculated in the usual conditions: 0.1-6.67 kPa, 900-1100 K, and the agreements with experiments are good. A series of ternary phase diagrams imply that the suitable composition for low pressure diamond growth in C-H-F system is confined in the small CH4-H-HF triangle. There is no diamond growth region while F/(F+H)>0.5, only a HF-CF4 line appears. The diamond growth region changes greatly with substrate temperature and fluorine concentration
Keywords
chemical vapour deposition; diamond; elemental semiconductors; phase diagrams; semiconductor growth; semiconductor thin films; 0.1 to 6.67 kPa; 900 to 1100 K; C-H-F; C:F; CVD; diamond films; fluorine addition; fluorine concentration; low pressure growth; phase diagrams; substrate temperature; Atomic layer deposition; Hydrocarbons; Hydrogen; Samarium; Solids; Temperature; Thermodynamics; Wide area networks;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786154
Filename
786154
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