DocumentCode
3069481
Title
A theoretical study of field emission from p-type diamond
Author
Huang, Qing-An ; Qin, Ming ; Zhang, Bin ; Zheng, Qi-Jing
Author_Institution
Microelectron. Center, Southeast Univ., Nanjing, China
fYear
1998
fDate
1998
Firstpage
815
Lastpage
818
Abstract
Field emission from polycrystalline diamond films is theoretically studied. Defects in the polycrystalline diamond are described as the defects of donor-type with a deep level within the band gap. The results show that field emission current from the conduction band and surface states may be ignored. Field emission from the p-type diamond is due to either a high surface field or negative electron affinity
Keywords
conduction bands; deep levels; defect states; diamond; electron affinity; electron field emission; elemental semiconductors; semiconductor thin films; surface states; C; band gap; conduction band; defects; donor-type deep level; field emission; high surface field; negative electron affinity; p-type diamond; polycrystalline diamond films; surface states; Electron emission; Ionization; Microelectronics; Photonic band gap; Poisson equations; Semiconductivity; Semiconductor device doping; Semiconductor films; Semiconductor process modeling; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786163
Filename
786163
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