Title :
A new self-data-refresh scheme for a sector erasable 16-Mb flash EEPROM
Author :
Umezawa, A. ; Atsumi, S. ; Kuriyama, M. ; Banba, H. ; Hoshino, C. ; Naruke, K. ; Yamada, S. ; Ohshima, Y. ; Oshikiri, M. ; Hiura, Y. ; Suzuki, T. ; Yoshikawa, K.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.
Keywords :
CMOS integrated circuits; EPROM; integrated memory circuits; 0.6 micron; 16 Mbit; erase/program cycling; flash EEPROM; nonvolatile element; sector erasable memory chip; self-data-refresh scheme; single-metal triple-well CMOS process; CMOS integrated circuits, memory; Read-only memories;
Conference_Titel :
VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIC.1993.920560
