DocumentCode

3069897

Title

Role of Test Stress Levels in Detection of Process-Induced Latent Charging Damage in MOS Transistors

Author

Broick, T. ; Peng, Lihua ; Viswanathan, C.R.

Author_Institution

University of California at Los Angeles

fYear

1996

fDate

13-14 May 1996

Firstpage

81

Lastpage

83

Keywords

Degradation; Electron traps; Kinetic theory; MOS devices; MOSFETs; Plasma devices; Plasma temperature; Stress; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1996 1st International Symposium on

Print_ISBN

0-9651577-0-9

Type

conf

DOI

10.1109/PPID.1996.715207

Filename

715207