Title :
Role of Test Stress Levels in Detection of Process-Induced Latent Charging Damage in MOS Transistors
Author :
Broick, T. ; Peng, Lihua ; Viswanathan, C.R.
Author_Institution :
University of California at Los Angeles
Keywords :
Degradation; Electron traps; Kinetic theory; MOS devices; MOSFETs; Plasma devices; Plasma temperature; Stress; Testing; Voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715207
