Thin film growth conditions for CVD diamond under low pressure

Author

Wang, Ji-Tao ; Liu, Zhi-Jie ; Zhang, Jim-Yun ; Jian-Yun Zhang ; Wan, Yong-Zhong

Author_Institution

Dept. of Electron. Eng., Fudan Univ., Shanghai, China

fYear

1998

fDate

1998

Firstpage

819

Lastpage

822

Abstract

Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH₃ concentration at the growth surface and accelerate the abstraction of H atoms covering the growth surface sites

Keywords

chemical vapour deposition; diamond; elemental semiconductors; phase diagrams; reaction kinetics theory; semiconductor growth; semiconductor thin films; surface chemistry; C; CH₃ concentration; CVD diamond; H atoms; N₂; abstraction; deposition rate; diamond growth; growth surface; low pressure; nitrogen addition; nonequilibrium stationary phase diagrams; phase diagrams; thin film growth; Chemical vapor deposition; Equations; Hydrogen; Nitrogen; Optical films; Plasma applications; Plasma chemistry; Thermal conductivity; Thermodynamics; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786189

Filename

786189