Title :
1997 IEEE Hong Kong Proceedings Electron Devices Meeting
Abstract :
The following topics were dealt with: silicon devices and technology; device modeling and simulation; fabrication technology; MOS gate dielectrics; compound devices and technology; sensor devices and SOI technology
Keywords :
semiconductor devices; MOS gate dielectrics; SOI technology; compound devices; device modeling; device simulation; electron devices; fabrication technology; sensor devices; silicon devices;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.641994
