DocumentCode :
3071034
Title :
The Effect of the Effective Channel Length Induced by Plasma Etching
Author :
Yang, S.H. ; Lan, C.Y. ; Pang, S.L. ; Chang, B.J. ; Lu, K.L. ; Liu, J.S. ; Yang, J.J.
Author_Institution :
Taiwan Semiconductor Manufacturing Company Ltd.
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
105
Lastpage :
108
Keywords :
Boron; Dry etching; Plasma applications; Plasma materials processing; Plasma measurements; Plasma simulation; Rough surfaces; Semiconductor films; Silicon; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715213
Filename :
715213
Link To Document :
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