Title :
Plasma Charging Induced Gate Oxide Damage During Metal Etching and Ashing
Author :
Lin, H.C. ; Perng, C.H. ; Chien, C.H. ; Chiou, S.G. ; Huang, T.Y. ; Chang, C.Y.
Author_Institution :
National Nano Device Laboratory
Keywords :
Electron traps; Etching; Gases; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma waves; Resists; Threshold voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715215
