Enhancement of reconstructed image by noise reduction for mask inspection of EUVL (Extreme ultra-violet light) lithography

In mask inspection of extreme ultra-violet lithography, defect sizes and locations are critical factors on semiconductor production. This paper addresses a simulated solution of phase retrieval method to reduce a fine dust suspended in the air or on the CCD surface. To reduce such noise, we introduce an image enhancement method. Experimental result shows the contaminated materials such as fine dust can be reduced by the suggested method.