Title :
InP-based heterojunction bipolar transistors: performance status and circuit applications
Author :
Asbeck, P. ; Farley, C. ; Chang, M. ; Wang, K. ; Ho, W.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahigh electron velocity is highlighted. Self-aligned fabrication techniques are described, and devices with wide bandgap collectors for microwave power applications and with low turn-on voltage for digital applications are presented. Applications are discussed. Frequency dividers configured with these devices have operated to 17 GHz.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; digital integrated circuits; frequency dividers; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 17 GHz; InAlAs-InP; InGaAs-InP; InP substrates; circuit applications; digital applications; frequency dividers; heterojunction bipolar transistors; low turn-on voltage; microwave power applications; self aligned fabrication techniques; ultrahigh electron velocity; wide bandgap collectors; Electrons; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Low voltage; Microwave devices; Microwave theory and techniques; Photonic band gap;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202976
