Title :
The preparation of Fe-doped and nominally undoped semi-insulating InP
Author :
Müller, G. ; Hofmann, D. ; Kipfer, P. ; Mose, F.
Author_Institution :
Inst. fuer Werkstoffwissenschaften, Erlangen-Nuernberg Univ., Germany
Abstract :
Nominally undoped semi-insulating (SI) InP (p approximately=10/sup 7/ Omega cm) was prepared by annealing of InP wafers in a phosphorus atmosphere. The electronic transport properties are compared to those of Fe-doped (SI) InP crystals grown by the liquid-encapsulated-Czochralski (LEC) technique. The values of the electron mobility of the undoped SI material are considerably higher than those of the Fe-doped and are close to the theoretical values of undoped InP. Depth profiles of the carrier concentration show a strong variation within the first 20 mu m, which can be fitted by the literature data of the diffusion coefficients of P and In, but the bulk SI behavior of the samples cannot be explained by self-diffusion mechanisms. The position of the energy level of the deep acceptor is found to lie 0.67+or-0.02 eV below the edge of the conduction band. Although this value is close to that of Fe/sup 3+/2+/ the results of chemical analysis make it unlikely that Fe is the acceptor.<>
Keywords :
III-V semiconductors; annealing; carrier density; carrier mobility; crystal growth from melt; deep levels; indium compounds; iron; semiconductor growth; InP; LEC; annealing; carrier concentration depth profiles; chemical analysis; deep acceptor; diffusion coefficients; electron mobility; electronic transport properties; energy level; liquid encapsulated Czochralski technique; semi insulating behaviour; Annealing; Atmosphere; Conducting materials; Conductivity; Crystals; Electron mobility; Indium phosphide; Iron; Neodymium; Optical materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202980
