InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET)

Author

MajidiAhy, R. ; Bandy, S. ; Ching, L. ; Glenn, M. ; Nishimoto, C. ; Silverman, S. ; Weng, S. ; Zdasiuk, G. ; Tan, Z. ; Riaziat, M.

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

92

Lastpage

95

Abstract

A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; harmonic generation; indium compounds; solid-state microwave devices; InGaAs-InAlAs-InP; InP substrate; NOTFET; first-order theory; microwave harmonic generation; millimeter-wave frequencies; nonlinear circuit function; nonlinearly-optimized transconductance field-effect transistor; strong transconductance nonlinearities; Circuit simulation; Design optimization; FETs; Fabrication; Frequency conversion; Microwave devices; Microwave theory and techniques; Millimeter wave measurements; Nonlinear circuits; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202993

Filename

202993