High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate

Author

Durel, S. ; Caulet, J. ; Gauneau, M. ; Lambert, B. ; Le Corre, A. ; Poudoulec, A. ; Lecrosnie, D.

Author_Institution

CNET, Lannion, France

fYear

1990

fDate

23-25 April 1990

Firstpage

139

Lastpage

143

Abstract

The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<>

Keywords

Hall effect; III-V semiconductors; X-ray diffraction examination of materials; carrier mobility; dislocation density; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscope examination of materials; 300 K; 77 K; Hall effect; Hall mobility; InP substrate; MBE system; X-ray diffraction; dislocation density; graded buffer layer; lattice mismatched In/sub 0.82/Ga/sub 0.18/As layer; photoluminescence; semiconductor; transmission electron microscopy; Buffer layers; Doping; Gallium; Hall effect; Indium phosphide; Nitrogen; Optical materials; Performance evaluation; Photodiodes; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203004

Filename

203004