Electronic properties of InAs surface quantum wells grown on InP

Author

Viktorovitch, P. ; Gallet, D. ; Gendry, M. ; Hollinger, G. ; Schohe, K. ; Benyattou, T. ; Tabata, A. ; Regaud, D. ; Guillot, G.

Author_Institution

LEAME, CNRS, Ecully, France

fYear

1990

fDate

23-25 April 1990

Firstpage

148

Lastpage

152

Abstract

The structural and electronic properties of arsenic stabilized InP

Keywords

III-V semiconductors; X-ray diffraction examination of materials; X-ray photoelectron spectra; energy gap; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; surface structure; 300 K; 4 K; InAs surface quantum wells; InAs-InP; InP:As surface; MBE reactor; RHEED; VSW surface analysis chamber; X-ray photoelectron diffraction; X-ray photoelectron spectroscopy; XPD; XPS; band gap; carrier confinement; electronic properties; photoluminescence; reflected high energy electron diffraction; semiconductor quantum well; strain induced shift; structural properties; Annealing; Indium phosphide; Molecular beam epitaxial growth; Passivation; Photoluminescence; Substrates; Surface cleaning; Surface morphology; Surface reconstruction; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203006

Filename

203006