Long wavelength quantum well laser diodes grown by metalorganic chemical vapor deposition

Author

Kasukawa, A. ; Okamoto, H.

Author_Institution

Furukawa Electr. Co. Ltd., Yokohama, Japan

fYear

1990

fDate

23-25 April 1990

Firstpage

153

Lastpage

156

Abstract

Long-wavelength GaInAs(P)/InP quantum well laser diodes (QW LDs) are described with respect to the epitaxial growth technique used, their QW structure, and the cavity design. QW LDs with graded-index separate-confinement heterostructure (GRIN-SCH), grown by metalorganic chemical vapor deposition (MOCVD), exhibit low threshold current density (410 A/cm/sup 2/), low threshold current (6 mA), high characteristic temperature (153 K), and high output power (100 mW). Preliminary aging tests have been carried out at 50 degrees C, 5 mW and at 70 degrees C, 5 mW. N appreciable change in driving current was seen after 7000 h, indicating the high reliability of these devices.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 100 mW; 153 K; 5 mW; 50 C; 6 mA; 70 C; 7000 h; GRIN-SCH; GaInAs-InP quantum well laser diodes; GaInAsP-InP long wavelength laser diodes; MOCVD; QW LD; QW structure; aging tests; cavity design; driving current; epitaxial growth technique; graded-index separate-confinement heterostructure; low threshold current density; metalorganic chemical vapor deposition; output power; semiconductor; Aging; Chemical vapor deposition; Diode lasers; Epitaxial growth; Indium phosphide; MOCVD; Optical design; Power generation; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203007

Filename

203007