High speed semi-insulating GaInAsP laser processing

Author

Wasserbauer, J. ; Fukushima, T. ; Bowers, J. ; Zehr, S. ; Haung, R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

165

Lastpage

170

Abstract

Semi-insulating (SI) planar buried heterostructure (SIPBH) lasers, designed to minimize device parasitics, have been fabricated for high-speed operation. The I-V characteristics of the Fe-doped SI InP employed for the current blocking layers were examined at elevated temperatures associated with high speed laser operation. It was found that the trap filled voltage, V/sub TF/, decreases linearly with increasing temperature. However, a SI InP layer with a V/sub TF/ at room temperature of 70 V demonstrated current blocking characteristics to temperatures in excess of 150 degrees C.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; I-V characteristics; InP:Fe blocking layer; SIPBH; atmospheric pressure MOCVD; current blocking layers; device parasitics; high-speed operation; planar buried heterostructure lasers; semiconductors; semiinsulating GaInAsP laser processing; trap filled voltage; Bandwidth; Electron traps; Impedance; Indium phosphide; Iron; Laser theory; MOCVD; Power lasers; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203009

Filename

203009