Title :
High yield optical integration compatible InP-based circuits
Author :
Williams, T. ; Fuji, H. ; Harrang, J. ; Daniels, R. ; Griem, H. ; West, D. ; Ray, S. ; LaRue, G.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
Abstract :
A set of digital circuits made with InP-based InGaAs/InAlAs heterostructure FETs (HFETs) is presented. The technology was designed to be integration-compatible with 1.3- mu m optical detectors. Integration levels ranged from 42 to 91 devices. For comparison, wafers were made with and without the optical detector epitaxial layers. High-speed performance with high yield has been achieved, showing that integration levels can be increased to realize more powerful optoelectronic circuit functions. Ring oscillator gate delays, with optical layers present, were as low as 61 ps at 16 mW/gate, and divide-by-2 operated to 1.6 GHz. Simulations show that optimized device sizing should significantly improve circuit performance. The high yield across four wafers indicates that complex OEICs are feasible.<>
Keywords :
III-V semiconductors; aluminium compounds; digital integrated circuits; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; photodetectors; 1.3 micron; 1.6 GHz; 61 ps; HFET; InGaAs-InAlAs heterostructure; InP substrate; MBE; OEIC; digital circuits; heterostructure FET; high yield optical integration; integration levels; optical detector epitaxial layers; optical detectors; optimized device sizing; optoelectronic circuit functions; optoelectronic integrated circuit technology; ring oscillator gate delays; semiconductor; simulation; Digital circuits; Epitaxial layers; HEMTs; High speed optical techniques; Indium compounds; Indium gallium arsenide; Integrated optics; MODFETs; Optical design; Optical detectors;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203012
