Device level analysis of threshold voltage variation in FinFET with varied design parameters

This paper describes the device characteristics verification and biasing analysis of Silicon on Insulator (SOI) devices with single gate and double gate. Improvement in threshold voltage controllability and variability has been observed for these devices. One of the leading double gate devices, FinFET is analyzed over different parameter variations and with back biasing techniques. Thanks to wide threshold voltage controllability of the FinFET device in comparison with all other devices. Some of the peculiar characteristics exhibited by the device for the fin width variation when controlled in single gate (SG) and independent gate (IG) modes have been proposed here for the first time.