• DocumentCode
    3072692
  • Title

    Reliability challenges of Cu wire deployment in flash memory packaging

  • Author

    Gan, C.L. ; Ng, E.K. ; Chan, B.L. ; Hashim, U.

  • Author_Institution
    Spansion (Penang) Sdn Bhd, Bayan Lepas, Malaysia
  • fYear
    2012
  • fDate
    24-26 Oct. 2012
  • Firstpage
    236
  • Lastpage
    239
  • Abstract
    Cu wirebonding become a great interest of industry in recent years due to its cost effectiveness and electrical and mechanical properties. However, several Cu wire bond reliability challenges are the key concerns in Cu wire deployment in semiconductor packaging. These include Cu wire oxidation and CuAl interface corrosion post HAST or UHAST reliability test. Bond reliability at a Cu wire bond under a humid environment is a major concern in replacing Au wires. Conventional bare Cu bonding wires, in general, are more susceptible to moisture corrosion compared to Au wire. This paper discusses the key reliability challenges Cu wire used in flash fineline BGA package. Cu wire IMD cracking induced by excessive ultrasonic bonding force, Cu wire oxidation due to long staging and Cu ball bond corrosion are discussed in this paper. Failure mechanisms and proposals for reliability improvement have been proposed and discussed in this paper.
  • Keywords
    ball grid arrays; copper; copper compounds; corrosion; flash memories; gold; integrated circuit packaging; integrated circuit reliability; lead bonding; moisture; Au; Cu; CuAl; UHAST reliability test; ball bond corrosion; ball grid arrays; flash memory packaging; moisture corrosion; semiconductor packaging; ultrasonic bonding force; wire bond reliability challenges; wire deployment; wire oxidation; Bonding; Compounds; Copper; Corrosion; Oxidation; Reliability; Wires; Cu oxidation; Cu wire; CuAl corrosion; IMD crack; reliability challenges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
  • Conference_Location
    Taipei
  • ISSN
    2150-5934
  • Print_ISBN
    978-1-4673-1635-4
  • Electronic_ISBN
    2150-5934
  • Type

    conf

  • DOI
    10.1109/IMPACT.2012.6420214
  • Filename
    6420214