DocumentCode
3072705
Title
In-situ rapid isothermal processing (RIP) of InP based devices
Author
Singh, R. ; Thakur, R.S. ; Katz, A. ; Nelson, A. ; Narayan, J.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
fYear
1990
fDate
23-25 April 1990
Firstpage
207
Lastpage
210
Abstract
The use of an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors is described. InP substrates used in this work were undoped n-type
Keywords
III-V semiconductors; aluminium; incoherent light annealing; indium compounds; metal-insulator-semiconductor devices; metallisation; solid phase epitaxial growth; strontium compounds; surface treatment; thermal stresses; Al-SrF/sub 2/-InP capacitors; II-A fluorides; InP substrate; in-situ annealed SrF/sub 2/ films; in-situ metallization; in-situ rapid isothermal chemical cleaning; in-situ rapid isothermal processor; semiconductors; solid phase epitaxial growth; thermal budget; thermal hysteresis; thermal stress measurement; undoped n-type; Annealing; Capacitors; Chemical processes; Cleaning; Epitaxial growth; Indium phosphide; Isothermal processes; Metallization; Solids; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location
Denver, CO, USA
Type
conf
DOI
10.1109/ICIPRM.1990.203018
Filename
203018
Link To Document