Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared

Author

Müller, Roland

Author_Institution

Heinrich-Hertz-Inst. fuer Nachrichtentech. Berlin GmbH, Germany

fYear

1990

fDate

23-25 April 1990

Firstpage

211

Lastpage

214

Abstract

The use of in-situ ellipsometry at a wavelength of 1300 nm for etch depth measurement and endpoint detection during reactive ion etching (RIE) of InGaAs(P)/InP heterostructures is reported. The basic principle and the experimental technique are briefly described. It is shown that etch depth monitoring and endpoint detection can be performed as low as 0.1. Furthermore, the method has been used for in-situ measurement of the wafer temperature during plasma exposure.<>

Keywords

III-V semiconductors; ellipsometry; gallium arsenide; gallium compounds; indium compounds; process control; spatial variables measurement; sputter etching; temperature measurement; 1300 nm; InGaAsP-InP heterostructure; depth monitoring; endpoint detection; etch depth measurement; in-situ ellipsometry; in-situ measurement; near infrared; plasma exposure; reactive ion etching process control; semiconductors; wafer temperature; Ellipsometry; Etching; Indium gallium arsenide; Indium phosphide; Optical films; Plasma applications; Plasma displays; Plasma materials processing; Substrates; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203019

Filename

203019