Title :
Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures
Author :
Jiao, K. ; Soltyka, A. ; Anderson, W. ; Katz, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA
Abstract :
The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<>
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; gallium arsenide; incoherent light annealing; indium compounds; ohmic contacts; p-n heterojunctions; platinum; semiconductor-metal boundaries; titanium; I-V-T measurements; Pt-Ti ohmic contact; Pt-Ti-InGaAs-InP heterostructure; RTP temperatures; activation energies; annealing; deep-level transient spectroscopy; electrical properties; electron trap levels; hole trap level; rapid thermal processing; semiconductor; Current measurement; Electric variables measurement; Electron traps; Energy measurement; Indium phosphide; Ohmic contacts; Rapid thermal annealing; Rapid thermal processing; Spectroscopy; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203021
