DocumentCode :
3072783
Title :
Time/Temperature Degradation of Solar Cells under the Single Diode Model
Author :
Junsangsri, Pilin ; Lombardi, Fabrizio
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear :
2010
fDate :
6-8 Oct. 2010
Firstpage :
240
Lastpage :
248
Abstract :
This paper presents an extensive analysis of the degradation of solar cells due to time and temperature. This analysis is based on the single diode model (SDM) and relies on HSPICE to initially establish through simulation the relationships between model parameters, efficiency and process variations. The analysis is extended to the operational temperature and time by extracting the degradation in the performance of the solar cell. The result shows that the efficiency of solar cells has an inverse relationship with temperature (i.e. at high temperature the efficiency degrades), irradiance levels are affected by the change of the photo-generation current and the series resistance in the single diode model. Moreover, when time is considered (at a fixed temperature), the resulting degradation is analyzed by extraction and optimization of the SDM parameters, in this case, every parameter decreases linearly except the diode saturation current and the diode ideality factor that increase by polynomial and linear relationships, respectively.
Keywords :
solar cells; HSPICE; diode ideality factor; diode saturation current; efficiency variations; linear relationships; model parameters; photogeneration current; polynomial relationships; process variations; series resistance; single diode model; solar cells; time-temperature degradation; Analytical models; Degradation; Integrated circuit modeling; Mathematical model; Photovoltaic cells; Resistance; Temperature; Solar cell; degraded operation; single diode model; temperature; time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems (DFT), 2010 IEEE 25th International Symposium on
Conference_Location :
Kyoto
ISSN :
1550-5774
Print_ISBN :
978-1-4244-8447-8
Type :
conf
DOI :
10.1109/DFT.2010.36
Filename :
5634902
Link To Document :
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