Anodic dissolution of InP

Author

Faur, M. ; Faur, M. ; Goradia, M. ; Bailey, Susan

Author_Institution

Dept. of Electr. Eng., Cleveland State Univ., OH, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

242

Lastpage

248

Abstract

An experimental study was conducted in order to select a suitable electrolytic solution and to optimize the anodic dissolution process of InP surface so as to be able to control the thinning of heavily doped surface layers of n/sup +/-p or p/sup +/-n InP structures. Several electrolytic solutions based on HCl, H/sub 3/PO/sub 4/, H/sub 2/SO/sub 4/, HF, CH/sub 3/COOH and H/sub 2/O/sub 2/ were investigated. From the analysis of electrochemical C-V, and I-V characteristics at different DC bias voltages and illumination levels and from scanning electron microscope inspection, it was determined that HF:CH/sub 3/COOH:H/sub 2/O/sub 2/:H/sub 2/O solution is a good candidate for rendering smooth surfaces, free of contamination and with good electrical characteristics, by anodic dissolution of n/sup +/- or p/sup +/-InP front surfaces.<>

Keywords

III-V semiconductors; dissolving; indium compounds; scanning electron microscope examination of materials; surface structure; surface treatment; H/sub 2/SO/sub 4/; H/sub 3/PO/sub 4/; I-V characteristics; InP structures; InP surface; anodic dissolution; electrical characteristics; electrochemical C-V characteristics; electrolytic solution; heavily doped surface layer thinning; n/sup +/-p structures; p/sup +/-n structures; scanning electron microscope inspection; Capacitance-voltage characteristics; Electric variables; Electrodes; Etching; Hafnium; Indium phosphide; NASA; Substrates; Surface contamination; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203025

Filename

203025