DocumentCode
3072860
Title
Actual stresses around TSV in whole 3D-SiP under reflow or power ON/OFF thermal load
Author
Kinoshita, T. ; Kawakami, Tomoya ; Wakamatsu, Takashi ; Shima, Shohei ; Matsumoto, Kaname ; Kohara, S. ; Yamada, Fumihiko ; Orii, Y.
Author_Institution
Toyama Prefectural Univ., Imizu, Japan
fYear
2012
fDate
24-26 Oct. 2012
Firstpage
119
Lastpage
122
Abstract
In this study, simulations on the reflow process or the power ON/OFF thermal loads were performed with a large scale simulator based on FEM (Finite Element Method), ADVENTURECluster® to discuss actual stresses around TSV and brittle Si chip and to ensure the reliability of 3D SiP. Elasto-plastic condition was considered to Cu materials of TSVs, micro bumps and heat sink.
Keywords
brittleness; elastoplasticity; finite element analysis; heat sinks; integrated circuit reliability; thermal management (packaging); three-dimensional integrated circuits; ADVENTURECluster; FEM; TSV; actual stresses; brittle silicon chip; elasto-plastic condition; finite element method; heat sink; large scale simulator; microbumps; power ON/OFF thermal load; reflow process; reliability; Heat sinks; Heat transfer; Silicon; Solid modeling; Stress; Thermal stresses; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location
Taipei
ISSN
2150-5934
Print_ISBN
978-1-4673-1635-4
Electronic_ISBN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2012.6420223
Filename
6420223
Link To Document