DocumentCode
3072879
Title
Inelastic analysis for singular stresses around TSV under reflow or power ON/OFF thermal load
Author
Wakamatsu, Takashi ; Kinoshita, T. ; Shima, Shohei ; Kawakami, Tomoya ; Matsumoto, Kaname ; Kohara, S. ; Yamada, Fumihiko ; Orii, Y.
Author_Institution
Toyama Prefectural Univ., Toyama, Japan
fYear
2012
fDate
24-26 Oct. 2012
Firstpage
123
Lastpage
126
Abstract
In this study, the required heat transfer coefficient of heat sink is quantitatively shown by steady heat conduction simulation. Maximum principal stress of silicon and equivalent stress of the TSV are obtained from thermal stress simulation.
Keywords
elemental semiconductors; heat conduction; heat sinks; heat transfer; integrated circuit packaging; silicon; thermal management (packaging); thermal stresses; three-dimensional integrated circuits; TSV; heat conduction simulation; heat sink; heat transfer coefficient; inelastic analysis; maximum principal stress; power ON/OFF thermal load; silicon; singular stresses; thermal stress simulation; Heat sinks; Heat transfer; Silicon; Solid modeling; Stress; Thermal stresses; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location
Taipei
ISSN
2150-5934
Print_ISBN
978-1-4673-1635-4
Electronic_ISBN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2012.6420224
Filename
6420224
Link To Document