Controlled growth of GaInAs/InP MQW and GaInAsP/GaInAs separate confinement MQW laser structures by LP-MOVPE

Author

Grützmacher, D. ; Hergeth, J. ; Glade, M. ; Wolter, K. ; Reinhardt, F. ; Fidorra, F. ; Wolfram, P. ; Balk, P.

Author_Institution

Inst. of Semicond. Electron., Tech. Univ. of Aachen, Germany

fYear

1990

fDate

23-25 April 1990

Firstpage

269

Lastpage

273

Abstract

Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAs-InP; GaInAsP-GaInAs; MQW lasers; diffusion coefficient; heavy hole injection; interface abruptness; low-pressure MOVPE growth; optimized growth; p-type dopant diffusion; separate confinement MQW laser structures; threshold current density; well width; Epitaxial growth; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical control; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203030

Filename

203030