Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications

Author

Meyyappan, M. ; Andrews, G. ; Morrison, B.J. ; Grubin, J.P. ; Grubin, H.L.

Author_Institution

Sci. Res. Associates, Glastonbury, CT, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

291

Lastpage

294

Abstract

The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; solid-state microwave devices; 190 GHz; InP-InGaAs; compositional grading; conduction band spike; doping; double heterostructure bipolar transistors; high collector current densities; high frequency applications; maximum frequency of oscillation; threshold frequency; transient solutions; two-dimensional simulation; Bipolar transistors; Computational modeling; Frequency; Heterojunction bipolar transistors; High performance computing; Indium gallium arsenide; Indium phosphide; Photonic band gap; Poisson equations; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203033

Filename

203033