High frequency transistors on MOCVD grown InGaAs/InP

Author

Johnson, G. ; Kapoor, V. ; Messick, L. ; Nguyen, R. ; Stall, R. ; McKee, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

304

Lastpage

307

Abstract

The fabrication of InGaAs MISFETs with 1- mu m gate lengths and up to 1-mm gate widths using an ion-implanted process is reported. The devices demonstrated an output power density of 1.07 W/mm at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively. A novel plasma deposited silicon/silicon oxide gate insulator was employed to achieve an output power stability within 1.2% over 24 h of continuous operation, with a corresponding drain bias current increase of less than 4%.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 38 percent; 4.3 dB; 9.7 GHz; InGaAs-InP; MISFETs; MOCVD; Si-SiO/sub 2/ gate insulator; drain bias current increase; gate lengths; output power density; output power stability; plasma deposition; power gain; power-added efficiency; Fabrication; Frequency; Indium gallium arsenide; Indium phosphide; MISFETs; MOCVD; Plasma density; Plasma stability; Power generation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203036

Filename

203036