InP MIS structure with phosphorus-nitride film grown by photo-CVD

Author

Jeong, Y. ; Lee, J. ; Hong, Y. ; Bae, Y.

Author_Institution

Dept. of Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

fYear

1990

fDate

23-25 April 1990

Firstpage

348

Lastpage

351

Abstract

Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<>

Keywords

Auger effect; III-V semiconductors; X-ray photoelectron spectra; aluminium; chemical vapour deposition; indium compounds; interface electron states; metal-insulator-semiconductor structures; phosphorus compounds; 100 to 200 degC; Al-P/sub 3/N/sub 5/-InP; Auger spectroscopy; InP surface; MIS structure; NH/sub 3/; PCl/sub 3/; PCl/sub 3/-NH/sub 3/; XPS; breakdown voltage; depth profiles; interface trap states; photo-CVD; resistivity; Atomic layer deposition; Electromagnetic wave absorption; Electrons; Gases; Indium phosphide; Light sources; Optical films; Refractive index; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203046

Filename

203046