DocumentCode
3073119
Title
Design of high speed GaInAs/InP p-i-n photodetectors
Author
Wey, Y. ; Crawford, D. ; Bowers, J. ; Hafich, M.J. ; Robinson, G.Y. ; Storz, F.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1990
fDate
23-25 April 1990
Firstpage
363
Lastpage
366
Abstract
The material and design constraints for high speed InGaAs/InP p-i-n photodetectors and the operation of such devices are discussed. The photodetector wafer was grown on
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; photodetectors; 1.06 micron; 127 GHz; 17 percent; 34 ohm; 36.8 fF; 560 degC; InGaAs-InP; InP substrate; RC bandwidth; bond pads; capacitance; coplanar waveguide integration; design constraints; gas-source molecular beam epitaxy; high speed; high-frequency microwave probe; p-i-n photodetectors; quantum efficiency; series resistance; Bandwidth; Coplanar waveguides; Electrical resistance measurement; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Substrates; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location
Denver, CO, USA
Type
conf
DOI
10.1109/ICIPRM.1990.203049
Filename
203049
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