Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

Author

Devlin, W. ; Cooper, D. ; Spurdens, P. ; Sherlock, G. ; Bagley, M. ; Regnault, J. ; Elton, D.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

fYear

1990

fDate

23-25 April 1990

Firstpage

367

Lastpage

371

Abstract

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 1.5 micron; InGaAsP; enhanced tuning range external cavity devices; facet reflectivity; fast-gain-recovery amplifiers; multiple quantum well devices; optical communications; polarization sensitivity; semiconductor optical amplifiers; Optical amplifiers; Optical devices; Optical feedback; Optical fiber polarization; Optical polarization; Optical saturation; Optical sensors; Semiconductor optical amplifiers; Stimulated emission; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203050

Filename

203050