Title :
Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices
Author :
Devlin, W. ; Cooper, D. ; Spurdens, P. ; Sherlock, G. ; Bagley, M. ; Regnault, J. ; Elton, D.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
Abstract :
Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 1.5 micron; InGaAsP; enhanced tuning range external cavity devices; facet reflectivity; fast-gain-recovery amplifiers; multiple quantum well devices; optical communications; polarization sensitivity; semiconductor optical amplifiers; Optical amplifiers; Optical devices; Optical feedback; Optical fiber polarization; Optical polarization; Optical saturation; Optical sensors; Semiconductor optical amplifiers; Stimulated emission; Tellurium;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203050
